Quantum Oscillation Signatures of Pressure-induced Topological Phase Transition in BiTeI
نویسندگان
چکیده
We report the pressure-induced topological quantum phase transition of BiTeI single crystals using Shubnikov-de Haas oscillations of bulk Fermi surfaces. The sizes of the inner and the outer FSs of the Rashba-split bands exhibit opposite pressure dependence up to P = 3.35 GPa, indicating pressure-tunable Rashba effect. Above a critical pressure P ~ 2 GPa, the Shubnikov-de Haas frequency for the inner Fermi surface increases unusually with pressure, and the Shubnikov-de Haas oscillations for the outer Fermi surface shows an abrupt phase shift. In comparison with band structure calculations, we find that these unusual behaviors originate from the Fermi surface shape change due to pressure-induced band inversion. These results clearly demonstrate that the topological quantum phase transition is intimately tied to the shape of bulk Fermi surfaces enclosing the time-reversal invariant momenta with band inversion.
منابع مشابه
Infrared- and Raman-spectroscopy measurements of a transition in the crystal structure and a closing of the energy gap of BiTeI under pressure.
BiTeI is a giant Rashba spin splitting system, in which a noncentrosymmetric topological phase has recently been suggested to appear under high pressure. We investigated the optical properties of this compound, reflectivity and transmission, under pressures up to 15 GPa. The gap feature in the optical conductivity vanishes above p∼9 GPa and does not reappear up to at least 15 GPa. The plasma e...
متن کاملSuperconductivity Bordering Rashba Type Topological Transition
Strong spin orbital interaction (SOI) can induce unique quantum phenomena such as topological insulators, the Rashba effect, or p-wave superconductivity. Combining these three quantum phenomena into a single compound has important scientific implications. Here we report experimental observations of consecutive quantum phase transitions from a Rashba type topological trivial phase to topological...
متن کاملQuantum spin Hall insulators in centrosymmetric thin films composed from topologically trivial BiTeI trilayers
The quantum spin Hall insulators predicted ten years ago and now experimentally observed are instrumental for a break- through in nanoelectronics due to non-dissipative spin-polarized electron transport through their edges. For this transport to persist at normal conditions, the insulators should possess a sufficiently large band gap in a stable topological phase. Here, we theoretically show th...
متن کاملSignatures of a quantum dynamical phase transition in a three-spin system in presence of a spin environment
We have observed an environmentally induced quantum dynamical phase transition in the dynamics of a two spin experimental swapping gate [J. Chem Phys. 124, 194507 (2006)]. There, the exchange of the coupled states |↑, ↓〉 and |↓, ↑〉 gives an oscillation with a Rabi frecuency b/~ (the spins coupling). The interaction, ~/τSE with a spin-bath degrades the oscillation with a characteristic decoheren...
متن کاملAb initio simulation of first-order amorphous-to-amorphous phase transition of silicon
The pressure-induced phase transition in amorphous silicon ~a-Si! is studied using ab initio constantpressure molecular-dynamic simulations. Crystalline silicon ~c-Si! shows a phase transformation from diamond-to-simple hexagonal at 29.5 GPa, whereas a-Si presents an irreversible sharp transition to an amorphous metallic phase at 16.25 GPa. The transition pressure of a-Si is also calculated fro...
متن کامل